Understanding the absolute maximum ratings and electrical characteristics is critical for replacing or designing with this vintage active component. When operating near high-frequency limits, tracking thermal limits and breakdown voltages safeguards the device from premature failure. Key Maximum Ratings & Electrical Characteristics 250 mW Gate-Source Breakdown Voltage (
: When downloading, look for a document dated between 1985 and 1995. Later "generic" datasheets sometimes contain errors for this specific part.
If you meant and can confirm that, I can provide typical characteristics (IDSS, Vgsoff, Yfs, Ciss) based on similar 3SK series devices, but an official manufacturer datasheet is not in my current knowledge base.
Because the 3SK41 is an older component, it can sometimes be difficult to source. If you cannot find an original, consider these common substitutes: Very similar characteristics, often interchangeable.
RDS(on)cap R sub cap D cap S open paren o n close paren end-sub to reduce thermal dissipation during conduction cycles. Pinout and Mechanical Configuration
If you are looking for or CAD models , I can suggest specialized distributors.
The , primarily designed for high-frequency amplification. It functions as a critical component in the RF (radio frequency) front-end stages of communication devices. Many online sources, such as Utsource, may incorrectly identify it as a NEC four-channel relay . However, this is a mistake; the correct classification is a dual-gate MOSFET . Key manufacturers include Toshiba and NEC.
Employed in radio stages to reduce internal noise and prevent front-end overload.
The "dual-gate" architecture is what makes the 3SK41 stand out for RF work. The second gate allows for easy Automatic Gain Control (AGC)
Utilizing the two gates to mix the RF signal with a Local Oscillator (LO) signal efficiently.
). According to documentation from manufacturers like Jotrin Electronics and Littlediode : N-Channel Dual-Gate MOSFET Package: TO-72 (4-lead metal can) Drain-Source Voltage ( VDScap V sub cap D cap S end-sub ): Typically rated up to Gate-Source Voltage ( VG1Scap V sub cap G 1 cap S end-sub VG2Scap V sub cap G 2 cap S end-sub ): ± (dependent on manufacturer data) Maximum Drain Current ( IDcap I sub cap D ): Total Device Dissipation ( PDcap P sub cap D ): Forward Transfer Admittance ( ): (high transconductance) Noise Figure ( NFcap N cap F ): Low-noise performance for superior weak-signal reception 3. Pin Configuration (TO-72 Package) The 3SK41 typically uses a four-lead TO-72 package. Drain (D) Source (S) / Shield Gate 1 ( G1cap G sub 1 - Input) Gate 2 ( G2cap G sub 2 - AGC/Control) Note: The case is usually connected to the Source ( ) to provide shielding, reducing parasitic capacitance. 4. Key Features & Advantages
3SK41 (Silicon N-Channel Power MOSFET) Key Datasheet Parameters:
3sk41 Datasheet
Understanding the absolute maximum ratings and electrical characteristics is critical for replacing or designing with this vintage active component. When operating near high-frequency limits, tracking thermal limits and breakdown voltages safeguards the device from premature failure. Key Maximum Ratings & Electrical Characteristics 250 mW Gate-Source Breakdown Voltage (
: When downloading, look for a document dated between 1985 and 1995. Later "generic" datasheets sometimes contain errors for this specific part.
If you meant and can confirm that, I can provide typical characteristics (IDSS, Vgsoff, Yfs, Ciss) based on similar 3SK series devices, but an official manufacturer datasheet is not in my current knowledge base.
Because the 3SK41 is an older component, it can sometimes be difficult to source. If you cannot find an original, consider these common substitutes: Very similar characteristics, often interchangeable. 3sk41 datasheet
RDS(on)cap R sub cap D cap S open paren o n close paren end-sub to reduce thermal dissipation during conduction cycles. Pinout and Mechanical Configuration
If you are looking for or CAD models , I can suggest specialized distributors.
The , primarily designed for high-frequency amplification. It functions as a critical component in the RF (radio frequency) front-end stages of communication devices. Many online sources, such as Utsource, may incorrectly identify it as a NEC four-channel relay . However, this is a mistake; the correct classification is a dual-gate MOSFET . Key manufacturers include Toshiba and NEC. Later "generic" datasheets sometimes contain errors for this
Employed in radio stages to reduce internal noise and prevent front-end overload.
The "dual-gate" architecture is what makes the 3SK41 stand out for RF work. The second gate allows for easy Automatic Gain Control (AGC)
Utilizing the two gates to mix the RF signal with a Local Oscillator (LO) signal efficiently. If you cannot find an original, consider these
). According to documentation from manufacturers like Jotrin Electronics and Littlediode : N-Channel Dual-Gate MOSFET Package: TO-72 (4-lead metal can) Drain-Source Voltage ( VDScap V sub cap D cap S end-sub ): Typically rated up to Gate-Source Voltage ( VG1Scap V sub cap G 1 cap S end-sub VG2Scap V sub cap G 2 cap S end-sub ): ± (dependent on manufacturer data) Maximum Drain Current ( IDcap I sub cap D ): Total Device Dissipation ( PDcap P sub cap D ): Forward Transfer Admittance ( ): (high transconductance) Noise Figure ( NFcap N cap F ): Low-noise performance for superior weak-signal reception 3. Pin Configuration (TO-72 Package) The 3SK41 typically uses a four-lead TO-72 package. Drain (D) Source (S) / Shield Gate 1 ( G1cap G sub 1 - Input) Gate 2 ( G2cap G sub 2 - AGC/Control) Note: The case is usually connected to the Source ( ) to provide shielding, reducing parasitic capacitance. 4. Key Features & Advantages
3SK41 (Silicon N-Channel Power MOSFET) Key Datasheet Parameters:
